| PART |
Description |
Maker |
| 1N6639US 1N6639 1N6641US 1N6641 1N6640US 1N6640 |
300 mAmp 75-100 Volts 4 nsec Computer Switching Diode 0.3 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| JANTXV1N4148UR-1 1N4148UR-1 CDLL4148 JAN1N4148UR-1 |
Signal or Computer Diode
SWITCHING DIODE
|
MICROSEMI[Microsemi Corporation]
|
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| PBYR2100CT |
Connector assemblies, Computer cables; 1 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Schottky barrier double diode
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| JAN1N4153UR-1 JAN1N3070 |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 2; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.81; IR (µA): 0.05; 0.15 A, SILICON, SIGNAL DIODE, DO-213AA
Signal or Computer Diode; Package: DO-7; IO (A): 0.1; IFSM (A): 2; Cj (pF): 5; Vrwm (V): 175; trr (nsec): 50; VF (V): 1; IR (µA): 0.1; 0.1 A, SILICON, SIGNAL DIODE, DO-7
|
Microsemi, Corp.
|
| 1N4446-1 1N4446-1E3 1N4149-1E3 1N4151-1E3 1N4448-1 |
Signal or Computer Diode
|
Microsemi
|
| 1N4607 |
Signal or Computer Diode
|
Microsemi
|
| JANTX1N6640US |
Signal or Computer Diode
|
Microsemi
|
| 1N4938 |
Signal or Computer Diode
|
Microsemi
|
| 1N4153DUP |
Signal or Computer Diode
|
Microsemi
|
